| PART |
Description |
Maker |
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| UPA800T UPA800T-T1 UPA800T-KB |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC[NEC]
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| PMBF5484 PMBF5486 PMBF5485 |
2G,FS/FD CVR,GSKT& SCRS,ALUM,DX UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
N-channel field-effect transistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| WPANTDP028 |
This single band dipole antenna is an ideal solution for single band WLAN access points operating in the ISM 2.45GHz band
|
World Produts Inc.
|
| SKY77573-21 |
Quad-band cellular handsets encompassing
Tx-Rx Front-End Module for Quad-Band GSM/ GPRS/ EDGE with 4-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|
